English
简体中文
MEMS OSC XO 125.0000MHZ LVCMOS
IC FLASH 16MBIT PARALLEL 64TBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 16Mb (1M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT46H16M32LFCX-5:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
|
MT46V32M8P-5B:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
|
MT29RZ4B4DZZHGPL-18 W.80U TRMicron Technology |
IC FLASH 8G DDR |
|
|
MT29F128G08AMCDBJ5-6IT:D TRMicron Technology |
IC FLASH 128GBIT PAR 132TBGA |
|
|
MT53B256M32D1TG-062 XT ES:CMicron Technology |
IC DRAM 8GBIT 1600MHZ FBGA |
|
|
MT46H128M16LFB7-5 IT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 60VFBGA |
|
|
7005L45J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
|
MT41K1G4RH-125:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
M58LR256KB70ZQ5ZMicron Technology |
IC FLASH 256MBIT PAR 88TFBGA |
|
|
MT29F1T08CPCABH8-6:A TRMicron Technology |
IC FLASH 1TB PARALLEL 166MHZ |
|
|
MT40A1G8SA-062E IT:JMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
CG8333AMCypress Semiconductor |
IC SRAM |
|
|
7005L35PFIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |