







CRYSTAL 13.5600MHZ 10PF SMD
COMP O= .343,L= 2.34,W= .027
XTAL OSC XO 32.5140MHZ TTL TH
IC FLASH 64GBIT MMC 100TBGA
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 64Gb (8G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-TBGA |
| 供应商设备包: | 100-TBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CG8243AACypress Semiconductor |
MICROPOWER SRAM |
|
|
MT53D4DABD-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MT48LC4M32B2B5-6A IT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
|
MT53B384M64D4EZ-062 WT ES:B TRMicron Technology |
IC DRAM 24GBIT 1600MHZ FBGA |
|
|
AS4C256M32MD2-18BCNAlliance Memory, Inc. |
IC DRAM 8GBIT 533MHZ 134FBGA |
|
|
MT29F1G08ABAEAH4-IT:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
|
DS1201NMaxim Integrated |
IC SRAM 1KBIT I2C 4MHZ 5SIP |
|
|
93C56C-I/WF15KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ DIE |
|
|
MT29F512G08CKCABK7-6:AMicron Technology |
IC FLASH 512GBIT PARALLEL 166MHZ |
|
|
MT29F1G08ABBFAM78A3WC1Micron Technology |
IC FLASH 1GBIT PARALLEL WAFER |
|
|
S99PDL128GCypress Semiconductor |
IC MEMORY NOR |
|
|
AT25M02-U1UM0B-TRoving Networks / Microchip Technology |
IC EEPROM 2MBIT SPI 5MHZ 8WLCSP |
|
|
MTFC16GLTDV-WTMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |