







MEMS OSC XO 16.3840MHZ CMOS SMD
OSC XO 1.03GHZ 1.8V LVDS
PV 41C 27#20 14#16 PIN RECP
IC SRAM 1MBIT PARALLEL 48CABGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-LFBGA |
| 供应商设备包: | 48-CABGA (7x7) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SFEM008GB1EM1TO-I-HG-11P-STDSwissbit |
IC FLSH 64GBIT EMMC 52MHZ 153BGA |
|
|
40060283Cypress Semiconductor |
IC FLASH NOR |
|
|
MT29F128G08AKCDBJ5-6IT:D TRMicron Technology |
IC FLASH 128GBIT PAR 132TBGA |
|
|
IS43R32800D-5BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 144LFBGA |
|
|
M25P40-VMP6TGB0D TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ VDFPN |
|
|
M58LR256KB70ZC5ZMicron Technology |
IC FLASH 256MBIT PAR 79VFBGA |
|
|
7006L20JIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
EDFA112A2PD-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
|
MT44K64M18RB-107E IT:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
|
MTFC4GACAECN-1M WTMicron Technology |
IC FLASH 32GBIT MMC WFBGA |
|
|
IS62WV5128EALL-55T2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
|
MT49H64M9FM-25:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
|
MT46H32M32LFB5-5 AT:BMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |