类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 168-VFBGA |
供应商设备包: | 168-VFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT52L512M64D4GN-107 WT ES:B TRMicron Technology |
IC DRAM 32GBIT 933MHZ 256FBGA |
|
S99PL032J70BFI120Cypress Semiconductor |
IC FLASH MEM NOR 48FBGA |
|
7006S55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
MT46V32M16P-5B AIT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
7005S15J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |
|
CG8105AACypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
PF48F4400P0VBQE0Micron Technology |
IC FLASH 512MBIT PARALLEL 88SCSP |
|
MT29F4G16ABAFAH4-AATES:FMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT41J512M4JE-15E:AMicron Technology |
IC DRAM 2GBIT PARALLEL 82FBGA |
|
MT53D512M64D4NW-053 WT ES:DMicron Technology |
IC DRAM 32GBIT 1866MHZ 432VFBGA |
|
25AA160A-I/S15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ DIE |
|
MT29F32G08ABEABM73A3WC1PMicron Technology |
IC FLASH 32GBIT PARALLEL DIE |
|
7133LA55PFI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |