







CRYSTAL 48.0000MHZ 6PF SMD
SELECTOR SWITCH LATCHING NON-ILL
IC SDRAM MOBILE DDR 512M
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MTFC32GAKAECN-5M AITMicron Technology |
IC FLASH 256GBIT MMC 153VFBGA |
|
|
M29F800DB70M1Micron Technology |
IC FLASH 8MBIT PARALLEL 44SO |
|
|
71321SA55PFIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
|
70V06S55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
16-3636-01Cypress Semiconductor |
IC GATE NOR |
|
|
7133LA20JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
|
DS28E11P+Maxim Integrated |
1-W 256B EEPROM W/SHA-256 TSOC |
|
|
MT29F256G08AUCABH3-10:AMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |
|
|
S99GL01GS0050Cypress Semiconductor |
IC FLASH |
|
|
CG8170AATCypress Semiconductor |
IC PSOC1 |
|
|
MT46V32M8P-5B IT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
|
MT29C8G96MAZBADKD-5 WTMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
|
TC58CVG0S3HRAIJToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT SPI 133MHZ 8WSON |