English
简体中文
XTAL OSC XO 212.5000MHZ LVDS
MEMS OSC XO 33.33333MHZ LVCMOS
XTAL OSC VCXO 173.37075MHZ LVDS
IC DRAM 4GBIT PARALLEL 78FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR4 |
| 内存大小: | 4Gb (512M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.75 ns |
| 电压 - 电源: | 1.14V ~ 1.26V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (7.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
M10042040108X0ISAYRenesas Electronics America |
IC RAM 4MBIT 108MHZ 8SOIC |
|
|
S29VS064RABBHI000ARochester Electronics |
PARALLEL NOR FLASH, 1.8V, 64MB |
|
|
5962-3829415MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
|
CG7443AFRochester Electronics |
SPECIAL |
|
|
W972GG8KS-25Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
|
7038L20PFGIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
|
SMJ64C16S-35JDMRochester Electronics |
DUAL MARKED (5962-8670503RA) |
|
|
GD25LQ16LIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8WLCSP |
|
|
5962-8687516XARenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
|
CG8003AARochester Electronics |
SPECIAL |
|
|
MB85RS1MTPN-G-AWEWE1Fujitsu Electronics America, Inc. |
IC FRAM 1MBIT SPI 40MHZ 8DFN |
|
|
CAT25C08LGIRochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8DIP |
|
|
5962-8700214UARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48LCC |