







XTAL OSC VCXO 250.0000MHZ LVPECL
MEMS OSC XO 66.0000MHZ H/LV-CMOS
GROUND STRAP 12" X 1/4"
IC SRAM 128KBIT PARALLEL 84PGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 128Kb (8K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 84-BPGA |
| 供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT29F2G08ABBGAH4-AATES:GMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
|
70T3539MS133BCGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 256CABGA |
|
|
SM661PE4-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 ML |
|
|
EDB8164B4PT-1D-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
|
CAT24C02TDE-GT3ARochester Electronics |
IC EEPROM 2KBIT I2C TSOT23-5 |
|
|
MT40A1G16KD-062E:E TRMicron Technology |
IC FLASH 16GBIT PARALLEL 96FBGA |
|
|
SM662GEA-ACSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
|
5962-8700208ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
|
MT52L768M32D3PU-107 WT:BMicron Technology |
IC DRAM 24GBIT 933MHZ 168FBGA |
|
|
5962-8700207ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
|
PC28F512P30BFBAlliance Memory, Inc. |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
|
CP7670ATRochester Electronics |
TRUETOUCH |
|
|
M29W128GL70ZA6FFlip Electronics |
IC FLASH 128MBIT PARALLEL 64TBGA |