







MOSFET N-CHANNEL 30V 50A TO252
CONN HEADER VERT 12POS 2.54MM
MOSFET N-CH 200V 18A TO262-3
DS2229
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CG6476AARochester Electronics |
SPECIAL |
|
|
MT53E4D1ABA-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
S99FL256SAGMFI003Flip Electronics |
INTEGRATED CIRCUIT |
|
|
EM6HD08EWAHH-12IHEtron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
|
70T3599S133BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 133MHZ |
|
|
S72VS256RE0AHBH13Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
|
|
MT52L1G32D4PG-093 WT:BMicron Technology |
IC DRAM 32GBIT 1067MHZ 178FBGA |
|
|
MT53D768M32D2DS-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
28C64AX-15B/UCRochester Electronics |
DUAL MARKED (5962-8751422YC) |
|
|
CY100E422L-5DCQRochester Electronics |
STANDARD SRAM, 256X4, ECL100K |
|
|
IS43DR16128C-25DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
|
MT53E128M16D1FW-046 AIT:A TRMicron Technology |
IC DRAM LPDDR4 2G FBGA |
|
|
R1WV6416RSD-7SI#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |