







IC FLASH 32MBIT SPI 108MHZ 8SO
KPT 05 14 5S F26
INSULATION DISPLACEMENT TERMINAL
HSI NARROW
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 32Mb (8M x 4) |
| 内存接口: | SPI |
| 时钟频率: | 108 MHz |
| 写周期时间 - 字,页: | 8ms, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 2V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
W9825G6JH-6I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 54TSOP II |
|
|
W25Q256FVEJQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
|
AT28C64-15TCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
|
M25PE10-VMN6PMicron Technology |
IC FLASH 1MBIT SPI 75MHZ 8SO |
|
|
IS43R16160B-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
|
N25Q064A11ESEA0F TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO |
|
|
24LC02B-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
|
IDT71V416S10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
IS42SM16800G-75BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
|
CY7C1021BNV33L-15VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
|
AT29C010A-15JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
|
70V35L20PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
|
N25Q064A11ESE40EMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO |