English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-TBGA |
| 供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M25PE40-VMP6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
25LC320/SRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 2MHZ DIE |
|
AS4C8M32S-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
93C76A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
71342LA25PF8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 64TQFP |
|
IS42S32800D-75ETLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS42S83200B-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
7025L35PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
AT27BV040-15TCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32TSOP |
|
W25X40CLDAIG TRWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8DIP |
|
S25FL129P0XMFV001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
IDT71V65903S85PFIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT25DF321-S3UAdesto Technologies |
IC FLASH 32MBIT SPI 70MHZ 16SOIC |
