English
简体中文
GANFET N-CH 80V 48A DIE
IC SRAM 64KBIT PARALLEL 28DIP
P51-2000-A-AF-M12-4.5V-000-000
SENSOR 2000PSI 9/16-18 UNF 4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-DIP (0.300", 7.62mm) |
| 供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C02N-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
N25Q032A13EF640F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 8VDFN |
|
IS45S16800B-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT45DB011B-XCRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 20MHZ 14TSSOP |
|
AT27C020-12PIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32DIP |
|
IDT71V3558S166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC32M8A2BB-6A:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
93C86A-E/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
7130LA25JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IDT71V424S10YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
IS42S32800D-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71124S20YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS25CD010-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 1MBIT SPI 100MHZ 8SOIC |