类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 125 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 7 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-VFBGA |
供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V3577SA75BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
93AA86A-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
MT46V64M16P-6T:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
24FC04HT-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
NM24C04EM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 100KHZ 8SO |
|
MT28F008B5VG-8 TETMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
M25P40-VMP6TGBO2 TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
|
IS41LV16100C-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
AT25020AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8MAP |
|
IS43LD16640A-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IS61LPS51236A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
M25PX64SOVZM6TP TRMicron Technology |
IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
AS4C256M8D3LA-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |