类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W128GSH70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
N25Q128A13ESE40GMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
AT24C256-10PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
DS28CN01U-W0D+1T-CMaxim Integrated |
IC EEPROM 1KBIT I2C 400KHZ 8UMAX |
|
S29GL128P90FFSS03Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT46V128M4TG-75:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
CAT93C66XI-T2Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
GD25LQ256DYIGRGigaDevice |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
AT27LV256A-70JCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT25160A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8DIP |
|
IS43QR16256A-083RBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
93C76AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
CY7C027V-20ACCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |