







MOSFET N-CH 200V 7A TDSON-8-5
IC DRAM 1GBIT PARALLEL 78TWBGA
IC SRAM 9MBIT PARALLEL 144TQFP
MEMS OSC XO 5.0000MHZ CMOS SMD
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 9Mb (512K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 2.4V ~ 2.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 144-LQFP Exposed Pad |
| 供应商设备包: | 144-TQFP (20x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS61LPD51236A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
|
IS65WV1288FBLL-45TLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
|
IS42S32160A-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
|
AT29C020-90JU-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
|
IS46TR16640C-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
|
AT45DB021B-TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 28TSOP |
|
|
CY7C1318BV18-278BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
NM24C08MSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 14SOIC |
|
|
70V9279L9PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
|
MT40A512M16JY-083E AUT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
|
AS4C512M8D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
AT24C1024BN-SH25-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
|
CY7C1399BNL-15ZXCTCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |