English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8, 128 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS2502R+00BMaxim Integrated |
IC EPROM 1KBIT 1-WIRE SOT23-3 |
|
AT28C256-15UM/883-610Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
IS42S16160B-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V16M16CY-5B AAT:MMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
SST39VF010-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TFBGA |
|
MT45W1MW16BDGB-701 WT TRMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
IDT71V256SA10PZGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT46V32M16FN-75 L:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S25FL132K0XMFV043Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W631GG8KB15IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
TE28F160C3BD70AMicron Technology |
IC FLSH 16MBIT PARALLEL 48TSOP I |
|
709089S15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
DS1330WP-100INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
