English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT53D512M32D2DS-046 WT:D TRMicron Technology |
IC DRAM 16GBIT 2.133GHZ 200WFBGA |
|
AT49F002-70TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
71321SA45JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT46V128M4BN-6:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
71V3577S65PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT46V64M16P-6T:AMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
IS46TR16640B-15GBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT29F1G08ABBEAH4-ITX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
70V9199L9PFIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
SST39WF1601-70-4C-MBQERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48WFBGA |
|
AT24C16-10PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DIP |
|
AT27C2048-70VIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 40VSOP |
|
W25Q32JVTBJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 24TFBGA |
