English
简体中文
MEMS OSC XO 26.0000MHZ H/LV-CMOS
IC FLASH 4MBIT PARALLEL 48TSOP
CONN BARRIER STRP 30CIRC 0.374"
440DC-HX=WILMAR UNDERVOLTAGE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 4Mb (512K x 8, 256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT28C64-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
70V9079S7PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
MT29E128G08CECDBJ4-6:D TRMicron Technology |
IC FLSH 128GBIT PARALLEL 132VBGA |
|
MT53E384M32D2DS-046 WT:E TRMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
SST25VF020B-80-4C-Q3AERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8USON |
|
CY7C199CN-12VXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS46TR16128B-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IDT71V016SA12YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
N25Q064A13EW9D0EMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8WPDFN |
|
EDB5432BEPA-1DIT-F-RMicron Technology |
IC DRAM 512MBIT PAR 168WFBGA |
|
AT34C02N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS25WP016-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SERIAL 8WSON |
|
S29GL256N10FFI010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |