类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C010E-20TIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
MT41K256M8DA-125 IT:KMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
CY7C1518V18-167BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT49F001-70PCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
IS41LV16100B-50KLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
EDBA232B2PF-1D-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 168FBGA |
|
AT49BV320C-70CURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 47CBGA |
|
W632GG8KB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
IS43TR81280B-125JBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
AT28C010E-15PIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32DIP |
|
S25FL127SABMFIZ03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
IS43TR82560BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
DS1230YP-70Maxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |