







MEMS OSC XO 25.000625MHZ H/LV-CM
IC DRAM 1GBIT PARALLEL 96TWBGA
LED COB 5000K SQUARE
5PC 2OZ SQUEEZE BOTTLE ESD SAFE,
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | -40°C ~ 125°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT29F8G08FACWP:C TRMicron Technology |
IC FLASH 8GBIT PARALLEL 48TSOP I |
|
|
MT28F128J3RG-12 ET TRMicron Technology |
IC FLASH 128MBIT PAR 56TSOP I |
|
|
M29W800DT70ZE6EMicron Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
|
AT93C46A-10PCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
|
AT29C040A-12TURoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
MT48H32M16LFCJ-75 L IT:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
|
IS61LF102418A-6.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
|
AT29BV010A-20TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
|
SST38VF6402B-70-5I-EKERoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
|
IDT71V65703S80PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
|
IS42S16800E-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
|
IS46TR16640CL-107MBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
|
M24C04-FMB5TGSTMicroelectronics |
IC EEPROM 4KBIT I2C 8UFDFPN |