| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 24-DIP (0.300", 7.62mm) |
| 供应商设备包: | 24-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS42S32160B-75EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
|
CY7C1440AV33-250AXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
|
AS4C64M16D2-25BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 84TFBGA |
|
|
IDT71V67602S166BQG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
|
MT47H128M8CF-3:H TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
|
IDT71T75802S150PFIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
|
IS42S16800E-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
|
7028L15PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
S34MS02G200BHI000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
|
AS4C256M16D3LB-12BINTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
AT28C010E-12PIRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32DIP |
|
|
7024S20PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
|
AS4C256M16D3LB-12BANTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |