







MEMS OSC XO 66.6660MHZ H/LV-CMOS
SCR 600V 6A TO252
IC DRAM 1GBIT PARALLEL 96TWBGA
TAPE DBL COATED NATURAL 25/PACK
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AT93C86A-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
|
S29JL032J60TFI323Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
|
BR24L64-WROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
|
IS42RM32800D-75TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
|
STK11C88-NF25ITRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 28SOIC |
|
|
IDT71256SA20YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
|
MT25QU128ABA8E12-0SITMicron Technology |
IC FLASH 128MBIT SPI 24TBGA |
|
|
RC28F256M29EWHAMicron Technology |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
|
M93C56-MN6TSTMicroelectronics |
IC EEPROM 2KBIT SPI 2MHZ 8SO |
|
|
AT25320AY1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 20MHZ 8MAP |
|
|
IS42S32160C-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
|
MT46V32M16BN-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
IS49NLC36160-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |