English
简体中文
MEMS OSC XO 4.0000MHZ H/LV-CMOS
IC NVSRAM 1MBIT PARALLEL 32SOIC
CIR BRKR MAG-HYDR LEVER .5A
8D 8C 8#8 SKT RECP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT27C256R-12TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
MX29LV400CBTC-90GMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IS61LV6416-10TISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
S34ML01G200TFV003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
IDT71T75802S200PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V256SA20YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT48LC2M32B2TG-6:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
IS46TR16256A-125KBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS46DR16640B-25EBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
IS49NLS96400-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
M25P32-VMW6TGBA TRMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8SO |
|
CY62256NLL-55ZXICypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY14B104N-ZS25XITCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |