English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile |
| 内存大小: | 512Mb (16M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 90-LFBGA |
| 供应商设备包: | 90-WBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S29GL064N90FAI010Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
AS6C3216-55TINTRAlliance Memory, Inc. |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
S29GL512P10TFIR10DCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT28C010-12PCRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32DIP |
|
AS4C32M16D1-5TINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
MT42L16M32D1AC-25 FAAT:AMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LP5256ESP-5SI#S0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
IS49NLC18320-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
M25P10-AVMP6TG TRMicron Technology |
IC FLASH 1MBIT SPI 50MHZ 8VFQFPN |
|
AT29C512-20PCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
CY7C1021BNV33L-10ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT49F001T-12JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
M93C56-RDS6TGSTMicroelectronics |
IC EEPROM 2KBIT SPI 1MHZ 8TSSOP |
