







MEMS OSC XO 66.6660MHZ LVCMOS LV
IC NVSRAM 8MBIT PARALLEL 36EDIP
LAPPING FILM SILICA 5"
2MM TERMINAL STRIP
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 8Mb (1M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 100ns |
| 访问时间: | 100 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 36-DIP Module (0.600", 15.24mm) |
| 供应商设备包: | 36-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS43DR82560B-25EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
|
709089S12PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
|
MT48LC4M32B2P-6A IT:LMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
|
MT44K32M18RB-093E:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
|
AT25256-10PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 3MHZ 8DIP |
|
|
AT29C040A-90PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
|
RC28F640P30BF65B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
|
MT46V32M16P-75 IT:CMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
|
CY7C199NL-15ZXCTCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
|
MT41K64M16TW-125:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
MT48LC4M16A2P-7E:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
|
IS42S32200E-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
|
AS4C128M8D2-25BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |