类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C256-90JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
AT25256T2-10TCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 20TSSOP |
|
S34ML04G200BHA000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT29C020-90JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
M25PE40-VMC6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8MLP |
|
FT24C08A-UMR-BFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8MSOP |
|
AT24C16N-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
S25FL129P0XNFV000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
W632GG8NB11JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
MT47H128M4CB-3:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT46V16M16P-6T:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AT25160B-XHLHX-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
IS46TR16640BL-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |