类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70125L35J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
CY7C009-15ACCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
S34ML01G200BHI903SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
IS29GL01GS-11DHV02-TRCypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
S29PL064J60BFI120ACypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
AT29C010-15JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
70V9369L9PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
AT24C1024-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8DIP |
|
IS42S16800D-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
SST25WF080-75-4I-SAFRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 75MHZ 8SOIC |
|
S25FL164K0XMFI001Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IDT71V35761YSA166BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V3556S166PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |