English
简体中文
COMP O= .437,L= 1.38,W= .050
IC FLASH 512KBIT SPI 50MHZ 8SO
750/30MM S/R LED EXT BTM
RF ATTENUATOR 14DB 50OHM TNC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 50 MHz |
| 写周期时间 - 字，页: | 15ms, 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C32N-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
N01L83W2AN25ISanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
24FC128-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
MT46V32M16P-6T IT:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
S29CL032J0MFAI030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80FBGA |
|
MT46V32M8P-5B:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MT48LC16M16A2BG-75 IT:DMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
M29W040B70N1STMicroelectronics |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
71V35761S183BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
7133SA55PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
M25P16-VMN6PMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO |
|
STK22C48-SF25Cypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
M27C4002-90C1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 44PLCC |