类型 | 描述 |
---|---|
系列: | PL-J |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 60 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-VFBGA |
供应商设备包: | 48-FBGA (8.15x6.15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB011D-MH-YRoving Networks / Microchip Technology |
IC FLASH 1MBIT SPI 66MHZ 8UDFN |
|
MTFC8GLWDM-AIT ZMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
71V321L55JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
CAT28F010GI-90TSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT29F64G08AEAAAC5-ITZ:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
7016S25PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
AT49LV002T-12VCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
IS61LF51236A-6.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT46V16M16TG-75 IT:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS62WV5128BLL-55HIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32STSOP I |
|
IDT71016S12Y8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
7132SA35PRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
IDT7164S20YI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |