







CONN PLG HSG FMALE 8POS INLINE
IDC CABLE- ASR20B/AE20M/APK20B
IC DRAM 4GBIT 2.133GHZ 200WFBGA
IC SRAM 4.5MBIT PARALLEL 119PBGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR (ZBT) |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | 8.5 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
M28W160ECB70ZB6EMicron Technology |
IC FLASH 16MBIT PARALLEL 46TFBGA |
|
|
AT49LV001T-90JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
|
DS1258AB-70#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
|
MT46V64M4BG-6:GTRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
|
MT47R256M4CF-25E:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
|
N25Q064A11ESECFF TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO |
|
|
7024L45JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
|
IS62WV25616DALL-55BIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
|
NMC27C64QE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 64KBIT PARALLEL 28CDIP |
|
|
MT46H64M32LFMA-6 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
|
MT46V64M16P-6T IT:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
|
AT24C01A-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
|
AT25128T2-10TC-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |