类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71016S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
DS1250YP-100+Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
MT46V32M16FN-75 L:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CAT24C44VI-GT3Sanyo Semiconductor/ON Semiconductor |
IC NVSRAM 256B SPI 1MHZ 8SOIC |
|
AT93C57-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
AT27C1024-12VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
S27KL0642GABHI020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
IS64WV51216BLL-10MA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
IDT6116SA45SO8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
MT48LC4M16A2TG-75 IT:G TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT24C128N-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
W25Q256FVFIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
70V25S20PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |