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CAP CER 18PF 2KV C0G/NP0 1825
XTAL OSC XO 133.333333MHZ HCSL
MOSFET N-CH 550V 12A TO247-3
IC DRAM 8GBIT 1600MHZ 200WFBGA
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| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 8Gb (256M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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