







MEMS OSC XO 40.5000MHZ H/LV-CMOS
IC DRAM 256MBIT PARALLEL 60FBGA
3-PHASE SSR 48-600VAC PNL MNT
TAPE REFLECTIVE GREEN 10"X 5YDS
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.3V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS42S16100E-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
|
AT45DB081B-CNCRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 20MHZ 8CASON |
|
|
IDT71V124SA10YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
|
S25FL116K0XMFV041Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
|
IS42RM32200K-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
|
R1EX24004ATAS0I#S0Renesas Electronics America |
IC EEPROM 4KBIT I2C 8TSSOP |
|
|
MT48LC4M16A2P-7E:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
|
MT40A256M16GE-083E:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
CY7C1327S-133AXICypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
AS4C32M16D2-25BANTRAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 84TFBGA |
|
|
M25P05-AVDW6TP TRMicron Technology |
IC FLASH 512KBIT SPI 8TSSOP |
|
|
709289L9PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
IS61LF102418A-7.5TQ-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |