







MOSFET N-CH 30V 87A D2PAK
IC FLASH 512MBIT PARALLEL 64BGA
CONN RESISTOR MOD
| 类型 | 描述 |
|---|---|
| 系列: | GL-P |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 110ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-Fortified BGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
70V24L15JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
|
M95080-MN6TPSTMicroelectronics |
IC EEPROM 8KBIT SPI 10MHZ 8SO |
|
|
AT49BV320DT-70CURoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 47CBGA |
|
|
7038L20PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
|
MT45W4MW16BFB-708 WT TRMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
|
MT48H16M32L2F5-10 IT TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
|
AT27C512R-45PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
|
MT49H16M18SJ-25 IT:BMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
|
M48Z2M1Y-70PL1STMicroelectronics |
IC NVSRAM 16MBIT PAR 36PLDIP |
|
|
70V25S15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
|
AT24C128C-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
|
AT45DB161D-TU-2.5Adesto Technologies |
IC FLASH 16MBIT SPI 50MHZ 28TSOP |
|
|
AT25DF512C-MAHN-YAdesto Technologies |
IC FLASH 512KBIT SPI 8UDFN |