English
简体中文
OSCOPE PRB X1/X10 250MHZ 1M/10M
IC SRAM 1MBIT PARALLEL 32TSOP I
FUSE GLASS 200MA 250VAC 2AG
STD HBEMPR160T K
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS7C31026C-10BINTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
IS62WV25616DBLL-45TIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V9189L6PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
IS42S32160B-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90LFBGA |
|
AT27C256R-90RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
IS43TR81280B-125JBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
SST39SF040-45-4I-WHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MT41J128M16HA-15E:D TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT45DQ161-MHD-YAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8UDFN |
|
IDT71V3577SA85BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M27V160-100K1STMicroelectronics |
IC EPROM 16MBIT PARALLEL 44PLCC |
|
W631GU6KB-11 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
IDT71256L25YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |