类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.400", 10.16mm Width) |
供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46V64M8P-75Z:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT70T3399S133DDRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 144TQFP |
|
AT28C64-15SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
70T3519S133DRIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
MT48LC4M32B2F5-6:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
S29GL128P10FAI013Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY7C1470BV33-200BZCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
M25P20-VMN3TPB TRMicron Technology |
IC FLASH 2MBIT SPI 75MHZ 8SO |
|
IDT71V3577SA75BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
7134SA20JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IDT71016S20YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
N25Q032A11ESF40F TRMicron Technology |
IC FLASH 32MBIT SPI 108MHZ 16SO |
|
LH5164AHN-10LSharp Microelectronics |
IC SRAM 64KBIT PARALLEL 28SOP |