| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256b (32 x 8) |
| 内存接口: | 1-Wire® |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
| 供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT40A512M8RH-083E:BMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MT47H128M8BT-37E L:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
|
USBF129-I/SNVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 30MHZ 8SOIC |
|
|
IDT71V3558S166PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
IS46TR16640B-15GBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
|
CY7C1319KV18-250BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
AT28HC256F-90TARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
|
M25P64-VMF3PBMicron Technology |
IC FLASH 64MBIT SPI 75MHZ 16SO W |
|
|
IDT71V3558XS133PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
IS61NLF51236-6.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
|
IS42SM32160C-75BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90WBGA |
|
|
IDT71V2559S85PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
N25Q128A13ESEC0GMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |