English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8, 256 x 16) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT47H512M4THN-37E:E TRMicron Technology |
IC DRAM 2GBIT PARALLEL 63FBGA |
|
S29GL064N11TFIV60Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
IS42S16160D-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
STK14CA8-NF25TRCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 32SOIC |
|
IDT71V65602S150PFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IDT71V35761S183BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT42L16M32D1AC-25 AAT:AMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
MT46V128M4FN-75:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
NP8P128A13T1760EMicron Technology |
IC PCM 128MBIT PAR 64EASYBGA |
|
AS6C8016A-55BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48FPBGA |
|
DS1270Y-100Maxim Integrated |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
MT28F800B5WP-8 TMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
DS25LV02R+T&RMaxim Integrated |
IC EPROM 1KBIT 1-WIRE TSOT23-5 |
