类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
FT24C512A-UTG-TFremont Micro Devices |
IC EEPROM 512KBIT I2C 8TSSOP |
|
MT29F2T08EMHAFJ4-3TES:AMicron Technology |
IC FLASH 2TB PARALLEL 132VBGA |
|
IS61NLP102418-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT48H32M16LFBF-75:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 54VFBGA |
|
7143LA55PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
M25PX64S-VMF6TP TRMicron Technology |
IC FLASH 64MBIT SPI 75MHZ 16SOIC |
|
AT27C010L-45PCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS42VM32400G-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
MT46V128M4FN-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS42S16100C1-5T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
70V9199L12PF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
M27W402-100K6STMicroelectronics |
IC EPROM 4KBIT PARALLEL 44PLCC |
|
MT29F1G08ABAEAWP-AITX:EMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |