







 
                            MEMS OSC XO 100.0000MHZ LVPECL
 
                            IC DRAM 512MBIT PARALLEL 84FBGA
 
                            SENSOR 15PSI 1/4-18NPT .5-4.5V
 
                            AMPLIFIER - LOW NOISE SATCOM
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tape & Reel (TR) | 
| 零件状态: | Obsolete | 
| 内存类型: | Volatile | 
| 内存格式: | DRAM | 
| 技术: | SDRAM - DDR2 | 
| 内存大小: | 512Mb (32M x 16) | 
| 内存接口: | Parallel | 
| 时钟频率: | 200 MHz | 
| 写周期时间 - 字,页: | 15ns | 
| 访问时间: | 600 ps | 
| 电压 - 电源: | 1.7V ~ 1.9V | 
| 工作温度: | -40°C ~ 95°C (TC) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 84-TFBGA | 
| 供应商设备包: | 84-FBGA (12x12.5) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | DS1249Y-85INDMaxim Integrated | IC NVSRAM 2MBIT PARALLEL 32EDIP | 
|   | R1EX24032ASAS0I#S0Renesas Electronics America | IC EEPROM 32KBIT I2C 400KHZ 8SOP | 
|   | CAT25256LI-GSanyo Semiconductor/ON Semiconductor | IC EEPROM 256KBIT SPI 20MHZ 8DIP | 
|   | CY7C1462SV25-200AXCTCypress Semiconductor | IC SRAM 36MBIT PARALLEL 100TQFP | 
|   | SST39WF1601-70-4C-MBQE-TRoving Networks / Microchip Technology | IC FLASH 16MBIT PARALLEL 48WFBGA | 
|   | AS4C8M16D1-5TCNTRAlliance Memory, Inc. | IC DRAM 128MBIT PAR 66TSOP II | 
|   | AT29C512-70TURoving Networks / Microchip Technology | IC FLASH 512KBIT PARALLEL 32TSOP | 
|   | AT45DB041B-TI-2.5Roving Networks / Microchip Technology | IC FLASH 4MBIT SPI 15MHZ 28TSOP | 
|   | IS49NLS18160-33BLISSI (Integrated Silicon Solution, Inc.) | IC DRAM 288MBIT PAR 144FCBGA | 
|   | MT47H128M8HQ-3:E TRMicron Technology | IC DRAM 1GBIT PARALLEL 60FBGA | 
|   | AT25640B-SSPDGV-TRoving Networks / Microchip Technology | IC EEPROM 64KBIT SPI 5MHZ 8SOIC | 
|   | AT28C16E-20PCRoving Networks / Microchip Technology | IC EEPROM 16KBIT PARALLEL 24DIP | 
|   | IS41C16100C-50KLIISSI (Integrated Silicon Solution, Inc.) | IC DRAM 16MBIT PARALLEL 42SOJ |