类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 576Kb (32K x 18) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25DF021-SSH-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
FM27C256QE150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
AT24C02Y1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MAP |
|
AT24C512BN-SH25-BRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
AT27C010-45JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
M29F200FT5AN6F2 TRMicron Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
MT46V64M8TG-75 IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IDT71V35761S166PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT41K256M16LY-107:NMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT24C256W-10SIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IDT71V67703S80PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT29LV512-12TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
IDT71V416YS10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |