类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 90 ns |
电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NLP102418-200B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S29GL064N90TFA040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
CY62256LL-55SNXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
IS49NLC96400-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
70V5388S200BGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 272PBGA |
|
MT46V16M16CY-6:K TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
AT24C32W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
MT48H8M32LFB5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70V35S15PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
AT49F002N-12JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
CAT25160VI-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
|
N25Q016A11ESC40F TRMicron Technology |
IC FLASH 16MBIT SPI 108MHZ 8SOP |
|
IS61LPS102418A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |