类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 900 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61VPS51236A-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
STK14C88-NF45ITRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
CY7C1474BV25-200BGCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
IDT71V25761YSA200BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT49LV002T-90PCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
W25Q128BVEJGWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
W25Q128FVTIGWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
N25Q128A13ESFC0GMicron Technology |
IC FLASH 128MBIT SPI 16SOP2 |
|
IDT71V547S100PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V67602S133BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
24FC512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
IDT71V2548S100PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS29GL256S-10TFV020Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |