







CRYSTAL 25.0000MHZ 8PF SMD
CONN HEADER VERT 62POS 2.54MM
IC EEPROM 256KBIT PAR 32PLCC
8D 41C MIXED PIN J/N
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 5ms |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.43x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IDT71T016SA15PHI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
|
71V25761S200PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
IS43TR81280BL-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 78TWBGA |
|
|
IDT71P73804S200BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
|
MT46H8M32LFB5-6:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
|
CAT28F010HI12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
|
70V9179L9PFI8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
|
70V639S12PRF8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 128TQFP |
|
|
IDT71T75602S200BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
|
R1WV3216RBG-7SI#S0Renesas Electronics America |
IC SRAM 32MBIT PARALLEL 48FBGA |
|
|
R1LV1616RSA-5SI#B0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
|
MT40A512M16JY-083E AAT:BMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
|
93C76AT-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |