类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 9Mb (512K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1380BV25-200ACRochester Electronics |
CACHE SRAM, 512KX36, 3NS |
|
W979H6KBVX2EWinbond Electronics Corporation |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LP5256ESP-5SR#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
7132LA20JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT58L128L36P1T-7.5ITRochester Electronics |
CACHE SRAM, 128KX36, 4NS PQFP100 |
|
25LC040A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8MSOP |
|
CY7C2568KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
DS1230Y-70IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
AT25020A-10TQ-2.7Rochester Electronics |
EEPROM, 256X8, SERIAL, CMOS |
|
CY62167EV30LL-45ZXATCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
24LC02BT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
FM93C06LM8XRochester Electronics |
EEPROM, 16X16, SERIAL, CMOS |
|
CY7C1024AV33-10ACRochester Electronics |
STANDARD SRAM, 128KX24 |