







MEMS OSC XO 16.0000MHZ H/LV-CMOS
MEMS OSC XO 125.0000MHZ LVCMOS
IC FLASH 256MBIT PARALLEL 64FBGA
2MM DOUBLE ROW MALE IDC ASSEMBLY
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (16M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 60ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 1.65V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
S25FL256LAGBHM020Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
|
93LC66AT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TDFN |
|
|
BQ2022ADBZRG4Texas Instruments |
IC EPROM 1KBIT SGL WIRE SOT23-3 |
|
|
MR2A08ACMA35REverspin Technologies, Inc. |
IC RAM 4MBIT PARALLEL 48FBGA |
|
|
CY62127DV30LL-55BVIRochester Electronics |
STANDARD SRAM, 64KX16, 55NS |
|
|
MT53D512M32D2DS-053 AAT:DMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
|
M5M51008DKV-55H#STRochester Electronics |
STANDARD SRAM, 128KX8 |
|
|
AS7C31024B-12TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
|
CY62127DV30LL-70ZIRochester Electronics |
STANDARD SRAM, 64KX16, 70NS |
|
|
CY7C1440KV25-250BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
S29GL512T11DHB010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
|
M5M5256DFP-70XL#SMRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
|
MT48LC16M16A2P-6A IT:G TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |