English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 32Mb (2M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V9089L12PFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
71V67803S133BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1423AV18-267BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR25H010F-2LBH2ROHM Semiconductor |
IC EEPROM 1KBIT SPI 10MHZ 8SOP |
|
NV24C16MUW3VLTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8UDFN |
|
IS42S16160J-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
71V416L12YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AS4C128M8D3LB-12BANAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
AS4C64M16D3B-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
S25FL128LDPBHV033Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
S29GL512S11DHIV23Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
CY27C256A-70WIRochester Electronics |
UVPROM, 32KX8, 70NS |
|
24AA025UIDT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
