English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 32Kb (4K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.173", 4.40mm Width) |
| 供应商设备包: | 8-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS7C256A-10TINTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |
|
CY7C1481BV33-133BZXCRochester Electronics |
CACHE SRAM, 2MX36, 6.5NS PBGA165 |
|
CY14B116K-ZS25XICypress Semiconductor |
IC NVSRAM 16MBIT PAR 44TSOP II |
|
CY7C168A-45PCRochester Electronics |
STANDARD SRAM, 4KX4, 45NS, CMOS |
|
S29GL128S10DHI023Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT27C1024-70JURoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
|
AS4C512M16D3LA-10BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
TMS2114L-25NLRochester Electronics |
STANDARD SRAM, 1KX4 |
|
AT28C256E-15FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
MT52L512M32D2PF-107 WT:B TRMicron Technology |
IC DRAM 16GBIT 933MHZ 178FBGA |
|
GS816018DGT-250IGSI Technology |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
S29GL256S11DHV023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MR25H40CDFEverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
