类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (6.4x10.1) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16160J-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S29GL032N90TFI043Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AS7C3256A-15JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CY7C1480BV33167BZIRochester Electronics |
CACHE SRAM, 2MX36, 3.4NS |
|
AT49BV002AT-70VIRochester Electronics |
IC FLASH 2MBIT PARALLEL 32VSOP |
|
S34ML02G104BHA010Flip Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
93C86C-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
|
71V65603S133PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
71V632ZS5PFRochester Electronics |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
IS61WV2568EDBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
CY7C1512KV18-333BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAT25C08SI-1.8TE13Rochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
MR1A16ACMA35Everspin Technologies, Inc. |
IC RAM 2MBIT SPI 48FBGA |