类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (256K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.445", 11.30mm Width) |
供应商设备包: | 32-SOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL512SAGMFIR11Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
BR24T32FJ-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SOPJ |
|
7134LA25PDGIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48DIP |
|
UPD46185182BF1-E40Y-EQ1-ARochester Electronics |
QDR SRAM, 1MX18, 0.45NS |
|
CY27C256A-55ZCRochester Electronics |
OTP ROM, 32KX8, 55NS PDSO28 |
|
CAT34C02HU4I-GT4Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8UDFN |
|
IS61LF25636B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
IS62WV25616EALL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
NDT18PFH-8KITInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
W29N02GVBIAAWinbond Electronics Corporation |
IC FLASH 2GBIT PARALLEL 63FBGA |
|
CAT24M01XIRochester Electronics |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY7C1019CV33-15ZXCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
AT25160B-XHL-BRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |