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IC SRAM 9MBIT PARALLEL 100TQFP
FET RF 40V 175MHZ TO272-6
IC DRAM 512MBIT PARALLEL 60VFBGA
INTEGRATED CIRCUIT
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 150 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.8 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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